Freescale Semiconductor, Inc.
GENERAL RELEASE SPECIFICATION
8.3 Programming/Erasing Procedures
To program a byte of EEPROM, set LATCH = CPEN = 1, set ER1 = ER0 = 0, write
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data to the desired address and then set EEPGM for a time, t
.
EPGM
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NOTE
Any bit should be erased before it is programmed. However, if
write/erase cycling is a concern, the following procedure will
minimize the cycling of each bit in each EEPROM byte.
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If PB • EB = 0, then program the new data over the existing data
without erasing it first. If PB • EB ≠ 0, then erase the byte before
programming where PB = byte data to be programmed and
EB = existing EEPROM byte data.
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To erase a byte of EEPROM, set LATCH = 1, CPEN = 1, ER1 = 0 and ER0 = 1,
write to the address to be erased and set EEPGM for a time, t
.
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EBYT
To erase a block of EEPROM, set LATCH = 1, CPEN = 1, ER1 = 1 and ER0 = 0,
write to any address in the block, and set EEPGM for a time, t
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A
.
EBLOCK
For a bulk erase, set LATCH = 1, CPEN = 1, ER1 = 1, and ER0 = 1, write to any
address in the array, and set EEPGM for a time, t
.
EBULK
To terminate the programming or erase sequence, clear EEPGM, delay for a time
to allow the program voltage to fall, and then clear LATCH and CPEN to free
t
FPV
up the buses. Following each erase or programming sequence, clear all
programming control bits.
NOTE
Erased/programmed state of the programming EEPROM (128 bytes)
and the user EEPROM (8064 bytes) is opposite. An erased
EEPROM memory location is a logic zero for user EEPROM, while it
is a logic one for programming EEPROM.
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EEPROM
Rev. 1.0
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