Flash Memory Characteristics
Data2 Valid
Data2
Data1 Valid
Data1
Data3 Valid
Data3
Data
Tri-stated
Data Invalid State
Data Active
Data Active
Figure 10-3 Signal States
10.4 Flash Memory Characteristics
Table 10-12 Flash Timing Parameters
Characteristic
Symbol
Tprog
Terase
Tme
Min
Typ
Max
Unit
μs
20
—
—
Program time1
20
—
—
—
—
Erase time2
ms
ms
100
Mass erase time
1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual
for details. Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Pro-
gram Flash Module, as it contains two interleaved memories.
2. Specifies page erase time. There are 512 bytes per page in the Data and Boot Flash memories. The Program Flash
Module uses two interleaved Flash memories, increasing the effective page size to 1024 bytes.
10.5 External Clock Operation Timing
1
Table 10-13 External Clock Operation Timing Requirements
Characteristic
Symbol
fosc
Min
Typ
Max
Unit
Frequency of operation (external clock driver)2
Clock Pulse Width3
0
—
—
—
—
120
—
MHz
ns
tPW
3.0
—
—
External clock input rise time4
trise
10
ns
External clock input fall time5
tfall
10
ns
1. Parameters listed are guaranteed by design.
2. See Figure 10-4 for details on using the recommended connection of an external clock driver.
3. The high or low pulse width must be no smaller than 8.0ns or the chip will not function.
4. External clock input rise time is measured from 10% to 90%.
5. External clock input fall time is measured from 90% to 10%.
56F8367 Technical Data, Rev. 9
Freescale Semiconductor
Preliminary
147
FREESCALE [ Freescale ]
