MC33910BAC / MC34910BAC
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 34. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33910 and -40°C ≤ TA ≤ 85°C for the
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
L1 INPUT
Wake-up Filter Time
STATE MACHINE TIMING
t
8.0
20
38
μs
WUF
Delay Between CS LOW-to-HIGH Transition (at End of SPI Stop Command)
and Stop Mode Activation(107)
tSTOP
μs
–
–
5.0
Normal Request Mode Timeout (see Figure 33)
t
110
150
205
ms
NRTOUT
Delay Between SPI Command and HS Turn On(108)
9.0 V < VSUP < 27 V
tS-
μs
ON
–
–
–
–
–
–
10
10
10
Delay Between SPI Command and HS Turn Off(108)
9.0 V < VSUP < 27 V
tS-OFF
μs
Delay Between Normal Request and Normal Mode After a Watchdog Trigger
Command (Normal Request mode)(107)
tSNR2N
μs
μs
Delay Between CS Wake-up (CS LOW to HIGH) in Stop Mode and:
Normal Request mode, VDD ON and RST HIGH
First Accepted SPI Command
tWUCS
tWUSPI
9.0
90
15
—
80
N/A
Minimum Time Between Rising and Falling Edge on the CS
t2CS
4.0
—
—
μs
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC(109), (110)
Duty Cycle 1: D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs
D1
7.0 V ≤ VSUP ≤ 18 V
0.396
—
—
—
Duty Cycle 2: D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs
D2
7.6 V ≤ VSUP ≤ 18 V
—
0.581
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4 KBIT/SEC(109),(111)
Duty Cycle 3: D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs
D3
μs
μs
7.0 V ≤ VSUP ≤ 18 V
0.417
—
—
—
—
Duty Cycle 4: D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs
D4
7.6 V ≤ VSUP ≤ 18 V
0.590
Notes
107. This parameter is guaranteed by process monitoring but, not production tested.
108. Delay between turn on or off command (rising edge on CS) and HS ON or OFF, excluding rise or fall time due to external load.
109. Bus load RBUS and CBUS 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds: 50% of TXD signal to LIN signal
threshold defined at each parameter. See Figure 27.
110. See Figure 28.
111. See Figure 29.
33910
Analog Integrated Circuit Device Data
Freescale Semiconductor
60
FREESCALE [ Freescale ]
