MC33910BAC / MC34910BAC
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 33. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33910 and -40°C ≤ TA ≤ 85°C for the
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)(103)
Output Current Limitation
IBUSLIM
mA
Dominant State, VBUS = 18 V
40
120
200
Leakage Output Current to GND
Dominant State; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_DOM
IBUS_PAS_REC
IBUS_NO_GND
IBUS
-1.0
–
–
–
–
–
–
mA
20
µA
mA
Recessive State; 8.0 V < VBAT < 18 V; 8.0 V < VBUS < 18 V; VBUS ≥ VBAT
-1.0
–
1.0
100
GND Disconnected; GNDDEVICE = VSUP; VBAT = 12V; 0 < V
< 18V
BUS
µA
V
disconnected; VSUP_DEVICE = GND; 0 < V
< 18V
BUS
BAT
Receiver Input Voltages
Receiver Dominant State
Receiver Recessive State
VSUP
VBUSDOM
VBUSREC
VBUS_CNT
VHYS
–
0.6
0.475
–
–
–
0.4
–
Receiver Threshold Center (VTH_DOM + VTH_REC)/2
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM
0.5
–
0.525
0.175
)
LIN Transceiver Output Voltage
V
VLIN_REC
VLIN_DOM_0
VLIN_DOM_1
VSUP-1
Recessive State, TXD HIGH, I
= 1.0 µA
–
–
OUT
–
–
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 0
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 1
1.1
1.7
1.4
2.0
LIN Pull-up Resistor to V
SUP
RSLAVE
TLINSD
20
150
–
30
165
10
60
180
–
kΩ
°C
°C
Over-temperature Shutdown(104)
Over-temperature Shutdown Hysteresis
TLINSD_HYS
Notes
103. Parameters guaranteed for 7.0 V ≤ VSUP ≤ 18 V.
104. When Over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.
33910
Analog Integrated Circuit Device Data
Freescale Semiconductor
58