欢迎访问ic37.com |
会员登录 免费注册
发布采购

33910_10 参数 Datasheet PDF下载

33910_10图片预览
型号: 33910_10
PDF下载: 下载PDF文件 查看货源
内容描述: LIN系统基础芯片,高 [LIN System Basis Chip with High]
分类和应用:
文件页数/大小: 90 页 / 1134 K
品牌: FREESCALE [ Freescale ]
 浏览型号33910_10的Datasheet PDF文件第54页浏览型号33910_10的Datasheet PDF文件第55页浏览型号33910_10的Datasheet PDF文件第56页浏览型号33910_10的Datasheet PDF文件第57页浏览型号33910_10的Datasheet PDF文件第59页浏览型号33910_10的Datasheet PDF文件第60页浏览型号33910_10的Datasheet PDF文件第61页浏览型号33910_10的Datasheet PDF文件第62页  
MC33910BAC / MC34910BAC  
ELECTRICAL CHARACTERISTICS  
STATIC ELECTRICAL CHARACTERISTICS  
Table 33. Static Electrical Characteristics (continued)  
Characteristics noted under conditions 5.5 V VSUP 18 V, -40°C TA 125°C for the 33910 and -40°C TA 85°C for the  
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal  
conditions, unless otherwise noted.  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)(103)  
Output Current Limitation  
IBUSLIM  
mA  
Dominant State, VBUS = 18 V  
40  
120  
200  
Leakage Output Current to GND  
Dominant State; VBUS = 0 V; VBAT = 12 V  
IBUS_PAS_DOM  
IBUS_PAS_REC  
IBUS_NO_GND  
IBUS  
-1.0  
mA  
20  
µA  
mA  
Recessive State; 8.0 V < VBAT < 18 V; 8.0 V < VBUS < 18 V; VBUS VBAT  
-1.0  
1.0  
100  
GND Disconnected; GNDDEVICE = VSUP; VBAT = 12V; 0 < V  
< 18V  
BUS  
µA  
V
disconnected; VSUP_DEVICE = GND; 0 < V  
< 18V  
BUS  
BAT  
Receiver Input Voltages  
Receiver Dominant State  
Receiver Recessive State  
VSUP  
VBUSDOM  
VBUSREC  
VBUS_CNT  
VHYS  
0.6  
0.475  
0.4  
Receiver Threshold Center (VTH_DOM + VTH_REC)/2  
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM  
0.5  
0.525  
0.175  
)
LIN Transceiver Output Voltage  
V
VLIN_REC  
VLIN_DOM_0  
VLIN_DOM_1  
VSUP-1  
Recessive State, TXD HIGH, I  
= 1.0 µA  
OUT  
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 0  
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 1  
1.1  
1.7  
1.4  
2.0  
LIN Pull-up Resistor to V  
SUP  
RSLAVE  
TLINSD  
20  
150  
30  
165  
10  
60  
180  
kΩ  
°C  
°C  
Over-temperature Shutdown(104)  
Over-temperature Shutdown Hysteresis  
TLINSD_HYS  
Notes  
103. Parameters guaranteed for 7.0 V VSUP 18 V.  
104. When Over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.  
33910  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
58  
 复制成功!