MC33910G5AC/MC3433910G5AC
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33910 and -40°C ≤ TA ≤ 85°C for the
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0KBIT/SEC ACCORDING TO LIN PHYSICAL
LAYER SPECIFICATION(48), (49)
Duty Cycle 1:
D1
D2
THREC(MAX) = 0.744 * VSUP
THDOM(MAX) = 0.581 * VSUP
0.396
—
—
D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V ≤ VSUP ≤ 18 V
Duty Cycle 2:
THREC(MIN) = 0.422 * VSUP
THDOM(MIN) = 0.284 * VSUP
—
—
0.581
D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V ≤ VSUP ≤ 18 V
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER
SPECIFICATION(48), (50)
Duty Cycle 3:
D3
THREC(MAX) = 0.778 * VSUP
THDOM(MAX) = 0.616 * VSUP
0.417
—
—
D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V ≤ VSUP ≤ 18 V
Duty Cycle 4:
D4
THREC(MIN) = 0.389 * VSUP
THDOM(MIN) = 0.251 * VSUP
—
—
0.590
D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V ≤ VSUP ≤ 18 V
Notes
48. Bus load RBUS and CBUS 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds: 50% of TXD signal to LIN signal
threshold defined at each parameter. See Figure 6.
49. See Figure 7.
50. See Figure 8.
33910
Analog Integrated Circuit Device Data
Freescale Semiconductor
18
FREESCALE [ Freescale ]
