ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 6. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ V2 ≤ 5.25 V, 5.5 V ≤ VSUP ≤ 18 V, and -40°C ≤ TA ≤ 125°C. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
CAN MODULE–SIGNAL EDGE RISE AND FALL TIMES (CANH, CANL)
Dominant State Timeout
Symbol
Min
Typ
Max
Unit
tDOUT
tLRD
200
360
520
µs
Propagation Loop Delay TXD to RXD (Recessive to Dominant) (35)
ns
60
70
100
110
130
200
210
225
255
310
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
80
110
Propagation Delay TXD to CAN (Recessive to Dominant) (36)
tTRD
ns
20
25
35
50
65
80
110
150
200
300
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
100
160
Propagation Delay CAN to RXD (Recessive to Dominant) (37)
tRRD
tLDR
10
50
140
ns
ns
Propagation Loop Delay TXD to RXD (Dominant to Recessive) (35)
100
120
140
250
150
165
200
340
200
220
250
410
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
Propagation Delay TXD to CAN (Dominant to Recessive) (36)
tTDR
ns
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
60
65
125
150
180
310
150
190
250
460
75
200
Propagation Delay CAN to RXD (Dominant to Recessive) (37)
tRDR
20
30
60
ns
Non-Differential Slew Rate (CANL or CANH)
V/µs
Slew Rate 3
Slew Rate 2
Slew Rate 1
Slew Rate 0
tSL3
tSL2
tSL1
tSL0
4.0
3.0
2.0
1.0
19
13.5
8.0
40
20
15
10
5.0
Bus Communication Rate
tBUS
60k
—
1.0M
bps
Νοτεσ
35. See Figure 8, page 21.
36. See Figure 9, page 21.
37. See Figure 10, page 21.
33742
Analog Integrated Circuit Device Data
Freescale Semiconductor
20
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