ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 6. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ V2 ≤ 5.25 V, 5.5 V ≤ VSUP ≤ 18 V, and -40°C ≤ TA ≤ 125°C. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
STATE MACHINE TIMING (CS, SCLK, MOSI, MISO, WDOG, INT) (CONTINUED)
Delay Between SPI and CAN Normal Mode (33)
Normal Mode (34)
tS-CAN_N
µs
µs
µs
—
—
—
—
10
10
Delay Between SPI and CAN Sleep Mode (33)
Normal Mode (34)
tS-CAN_S
Delay Between CS Wake-Up (CS LOW to HIGH) and Device in Normal
Request Mode (VDD ON and RST HIGH)
tW-CS
Stop Mode
15
90
40
—
90
Delay Between CS Wake-Up (CS LOW to HIGH) and First Accepted SPI
Command
tW-SPI
µs
Device in Stop Mode After Wake-Up
N/A
Delay Between INT Pulse and First SPI Command Accepted
Device in Stop Mode After Wake-Up
tS-1STSPI
µs
µs
20
25
—
—
N/A
—
Delay Between Two SPI Messages Addressing the Same Register
t2SPI
OUTPUT PIN (VDD)
Reset Delay Time
µs
µs
tD
Measured at 50% of Reset Signal
4.0
40
—
30
75
IDD Overcurrent to Wake-Up Deglitcher Time (34)
55
tIDD-DGLT
OUTPUT PIN (RST)
Reset Duration After VDD HIGH
ms
33742
tRSTDUR
12
15
18
33742S
tRSTDURS
3.0
3.5
4.0
INPUT PINS (L0, L1, L2, AND L3)
Wake-Up Filter Time
Notes
tWUF
8.0
20
38
µs
33. Delay starts at falling edge of clock cycle #8 of the SPI command and start of “Turn ON” or “Turn OFF” of HS or V2.
34. Guaranteed by design; it is not production tested.
33742
Analog Integrated Circuit Device Data
Freescale Semiconductor
19