FDS4501H
Typical Characteristics Q1
10
I
D
= 9.3A
8
V
DS
= 5V
15V
10
3000
f = 1 MHz
V
GS
= 0 V
C
ISS
2000
2500
6
1500
4
1000
2
500
0
0
5
10
15
20
25
30
C
RSS
0
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100
100
µ
s
10
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.01
0.01
0.1
1
10
100
10s
DC
0.1
P(pk), PEAK TRANSIENT POWER (W)
30
25
Figure 18. Capacitance Characteristics.
SINGLE PULSE
R
θJ
A
= 125°C/W
T
A
= 25°C
20
15
10
5
0
0.01
0.1
1
t
1
, TIME (sec)
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) + R
θ
JA
0.1
0.05
0.1
R
θ
JA
= 125 C/W
P(pk)
0.02
o
0.01
0.01
SINGLE PULSE
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
t
1
, TIME (sec)
1
10
100
1000
0.001
0.0001
0.001
0.01
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
