Electrical Characteristics
Symbol
Parameter
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q1
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5V, R
GEN
= 6
Ω
Q1
V
DS
= 15 V, I
D
= 9.3 A, V
GS
= 4.5 V
Q2
V
DS
= 15 V, I
D
= –2.4 A,V
GS
= –4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
15
15
5
15
38
40
10
25
17
13
4
2.5
5
2.0
27
27
10
27
61
64
20
40
27
21
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
Voltage
V
GS
= 0 V, I
S
= –2.1 A
(Note 2)
Q1
Q2
Q1
Q2
2.1
–2.1
1.2
–1.2
A
V
a) 50°C/W when
mounted on a
1 in
2
pad of 2 oz
copper
b) 105°C/W when
mounted on a 0.04
in
2
pad of 2 oz
copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
