FDS4501H
Typical Characteristics: Q2
15
V
GS
= -4.5V
-3.0V
12
-2.5V
-2.0V
4
3.5
V
GS
= -1.5V
3
9
-1.8V
6
2.5
2
1.5
-1.8V
-2.0V
-2.5V
-3.0V
-4.5V
3
-1.5V
1
0.5
0
0
0.5
1
1.5
2
2.5
0
3
6
9
12
15
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
1.5
1.4
1.3
1.2
1.1
1
I
D
= -2.4A
V
GS
= -4.5V
I
D
= -1.2 A
0.12
0.1
0.08
T
A
= 125
o
C
0.06
T
A
= 25
o
C
0.04
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
0.02
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation with
Temperature.
15
V
DS
= - 5V
12
-55
o
C
9
T
A
= 125
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
1
0.1
T
A
= 125
o
C
25
o
C
-55
o
C
6
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
3
0
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
