FDS4501H
Typical Characteristics: Q1
21
V
GS
= 10.0V
18
15
12
9
6
3
0
0
0.5
1
1.5
2
6.0V
4.5V
3.5V
3.0V
4
3.5
V
GS
= 2.5V
3
2.5
2
2.5V
1.5
1
0.5
0
5
10
15
20
25
I
D
, DIRAIN CURRENT (A)
3.0V
3.5V
4.5V
6.0V
10V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
I
D
= 4.7A
0.06
1.6
I
D
= 9.3A
V
GS
= 10V
1.4
1.2
0.04
1
0.02
0.8
T
A
= 25
o
C
0
-50
-25
0
25
50
75
100
125
150
2
2.5
3
3.5
4
4.5
5
T
A
= 125
o
C
0.6
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
25
V
DS
= 5.0V
20
T
A
= -55
o
C
25
o
C
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
125
o
C
1
T
A
= 125
o
C
25
o
C
-55
o
C
15
0.1
10
0.01
5
0.001
0.0001
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1
1.2
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
