FDS4501H
May 2001
FDS4501H
Complementary PowerTrench
®
Half-Bridge MOSFET
General Description
This complementary MOSFET half-bridge device is
produced using Fairchild’s advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Features
•
Q1: N-Channel
9.3A, 30V
R
DS(on)
= 18 mΩ @ V
GS
= 10V
R
DS(on)
= 23 mΩ @ V
GS
= 4.5V
•
Q2: P-Channel
–5.6A, –20V
R
DS(on)
= 46 mΩ @ V
GS
= –4.5V
R
DS(on)
= 63 mΩ @ V
GS
= –2.5V
Applications
•
DC/DC converter
•
Power management
•
Load switch
•
Battery protection
D
D
D
D
D
D
DD
Q2
5
6
Q1
4
3
2
1
SO-8 SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Parameter
- Continuous
- Pulsed
Power Dissipation for Single Operation
2
G
S2
1
G
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
S1
Q1
30
±20
9.3
20
2.5
1.2
1
–55 to +150
Q2
–20
±8
–5.6
–20
Units
V
V
A
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS4501H
Device
FDS4501H
Reel Size
13”
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
