FDS4501H
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= –250 µA
I
D
= 250 µA, Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
V
GS
= +8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= –250 µA
I
D
= 250 µA, Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
V
GS
= 10 V, I
D
= 9.3 A
V
GS
= 10 V, I
D
= 9.3 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 7.6 A
V
GS
= –4.5 V, I
D
= –5.6 A
V
GS
= –4.5 V, I
D
= –5.6 A, T
J
= 125°C
V
GS
= –2.5 V, I
D
= –5.0 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= 5 V, I
D
= 9.3 A
V
DS
= 5 V, I
D
= –5.6 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
–20
Typ Max Units
V
24
–13
1
–1
+100
+100
mV/°C
µA
nA
Off Characteristics
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
1
–0.4
Q2
1.6
–0.7
–4
3
14
21
17
36
49
47
3
–1.5
V
mV/°C
18
29
23
46
80
63
mΩ
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
28
16
1958
1312
424
240
182
106
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF
pF
pF
FDS4501H Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
