4. Winding Specification
Pin No.
Wire
Turns
Inductance
250µH
Leakage Inductance
Remarks
16µH
5 Æ 2
17
1kHz, 1V
1 UEW 0.4φ
2256( =
0+0+376•6)
4.2H
290mH
7 Æ 9
1kHz, 1V
1 UEW 0.04φ
5. BOM of the Application Circuit
Part Ref.
Value
Fuse
Description
Part Ref.
Value
Description
C14
C15
C17
C18
C19
C21
3.3n
100n
1µ
50V 1608 K
50V 1608 K
50V 2012 K
50V 1608 K
50V 1608 K
50V 1608 K
F1
24V 3A
FUSE
Resistor (SMD)
R1
R2
10k
10k
1608 J
1608 J
1608 F
1608 F
1608 J
1608 F
1608 J
1608 J
1608 J
1608 J
1608 F
1608 F
1608 J
1608 F
4.7n
3.3n
3.3n
R3
200
R5
100k
10k
Capacitor (DIP)
R6
C4
3p
3KV
3KV
3KV
3KV
R7
200
C13
C16
C20
3p
R8
75k
3p
R9
10k
3p
R10
R12
R13
R14
R15
R16
8.2k
10k
Electrolytic capacitor
220µ
C1
C2
25V
25V
200
220µ
1.5M
10k
MOSFET (SMD)
M1
M2
FDD8424H
FDD8424H
Fairchild Semiconductor
Fairchild Semiconductor
200
Capacitor (SMD)
1µ
Wafer (SMD)
C3
C5
50V 2012 K
50V 2012 K
50V 1608 K
16V 3216
CN1
CN2
CN3
CN4
CN5
12505WR-10
35001WR-02A
35001WR-02A
35001WR-02A
35001WR-02A
1µ
C6
3.3n
10µ
C7
C8
10n
50V 1608 K
16V 3216
C9
10µ
Transformer (DIP)
C10
C11
C12
220p
10n
50V 1608 K
50V 1608 K
50V 2012 K
TX1
TX2
EFD2126
EFD2126
1µ
© 2007 Fairchild Semiconductor Corporation
FAN7317 • 1.0.2
www.fairchildsemi.com
21
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
