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EMD3D256M08G1-150CBS1 参数 Datasheet PDF下载

EMD3D256M08G1-150CBS1图片预览
型号: EMD3D256M08G1-150CBS1
PDF下载: 下载PDF文件 查看货源
内容描述: [256Mb ST-DDR3 Spin-transfer Torque MRAM]
分类和应用: 双倍数据速率
文件页数/大小: 38 页 / 2405 K
品牌: EVERSPIN [ Everspin Technologies ]
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EMD3D256M08BS1  
EMD3D256M16BS1  
DC CHARACTERISTICS  
DC Characteristics are defined under standard measurement conditions specified in JEDEC Standard  
JESD79-3F.  
Table 8 – Power Supply and Input Leakage  
All voltages referenced to VSS  
Symbol Parameter/Condition  
Min  
Nom  
Max  
Unit  
Notes  
VDD  
Supply Voltage  
1.425  
1.425  
1.5  
1.5  
1.575  
1.575  
V
V
1, 2  
1, 2  
VDDQ  
I/O supply voltage  
Input leakage current  
Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤  
VIN ≤ 1.1V  
II  
-2  
-1  
-
-
2
1
μA  
μA  
3
(All other pins not under test = 0V)  
VREF supply leakage current  
IVREF  
VREFDQ = VDD/2 or VREFCA = VDD/2  
(All other pins not under test = 0V)  
3, 4  
Notes:  
1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ  
.
2. VDD and VDDQ may include AC noise of 50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD  
and VDDQ must be at same level for valid AC timing parameters.  
3. VREF (see JESD79-3F Section 8, AC and DC Input Measurement Levels)  
4. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal.  
EMD3D256M08BS1/16BS1 Revision 1.3 10/2018  
Copyright © 2018 Everspin Technologies  
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