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EMD3D256M08G1-150CBS1 参数 Datasheet PDF下载

EMD3D256M08G1-150CBS1图片预览
型号: EMD3D256M08G1-150CBS1
PDF下载: 下载PDF文件 查看货源
内容描述: [256Mb ST-DDR3 Spin-transfer Torque MRAM]
分类和应用: 双倍数据速率
文件页数/大小: 38 页 / 2405 K
品牌: EVERSPIN [ Everspin Technologies ]
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EMD3D256M08BS1  
EMD3D256M16BS1  
Ball Functions and Descriptions (Continued)  
Symbol  
Type  
Name  
Description  
Auto-precharge: A10 is sampled during READ/WRITE commands to determine  
whether Autoprecharge should be performed to the accessed bank after the READ/  
WRITE operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled  
during a Precharge command to determine whether the Precharge applies to one  
bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the  
bank is selected by bank addresses.  
Auto Pre-  
charge  
A10/AP  
Input  
Burst Chop: A12 / BC is sampled during READ and WRITE commands to determine  
if burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst  
chopped). See command truth table for details.  
A12/BC  
RESET  
Input  
Burst Chop  
Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive  
Acitve Low  
Asynchro-  
nous Reset  
when RESET is HIGH. RESET must be HIGH during normal operation. RESET is a  
CMOS rail-to-rail signal with DC high and low at 80% and 20% of VDD, i.e. 1.20V for  
DC high and 0.30V for DC low.  
Input  
Input/  
Output Output  
Data Input/  
Data Input/ Output: Bi-directional data bus. DQ0-7 (x8) and DQ8-15 (x16) are refer-  
DQ  
enced to V  
.
REFDQ in  
Data strobe: Output with read data. Edge-aligned with read data. Input with write  
data. Center-aligned to write data. For x16 operation DQSL/DQSL is associated with  
DQ0-7 and DQSU/DQSU is associated with DQ8-15.  
Input/  
DQS/DQS  
Data Strobe  
Output  
Output  
Termination data strobe: Applies to the x8 configuration only. When enabled via  
Mode Register A11=1 in MR1, STT-MRAM will enable the same termination resis-  
tance function on TDQS/TDQS that is applied to DQS/DQS. When disabled via  
mode register A11=0 in MR1, DM/TDQS will provide the data mask function and  
TDQS is not used.  
Termination  
Data Strobe  
TDQS, TDQS  
VDD  
Supply  
Supply  
Supply  
Supply  
Power Supply Power supply: 1.5V 0.075V.  
VDDQ  
DQ Power  
Supply  
DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immu-  
nity.  
VSS  
Ground  
Ground  
VSSQ  
DQ Ground  
DQ ground: Isolated on the device for improved noise immunity.  
Reference  
Voltage for  
Control, Com-  
mand and  
Address  
Reference voltage for control, command, and address: V  
at all times for proper device operation.  
must be maintained  
REFCA  
VREFCA  
Supply  
Table continues on the next page.  
EMD3D256M08BS1/16BS1 Revision 1.3 10/2018  
Copyright © 2018 Everspin Technologies  
13  
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