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M32L1632512A-8Q 参数 Datasheet PDF下载

M32L1632512A-8Q图片预览
型号: M32L1632512A-8Q
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 512KX32, 6.5ns, CMOS, PQFP100,]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 54 页 / 877 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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M32L1632512A  
At MRS A9 =”1”  
Read Burst =1, 2, 4, 8, full page/write Burst =1  
BRSW  
Special  
MODE  
At auto precharge of write, tRAS should not be violated.  
8 Column Block Write. LSB A0-2 are ignored. Burst length =1  
tRAS should not be violated.  
Block Write  
At auto precharge, tRAS should not be violated.  
Random  
MODE  
tBDL =1, Valid DQ after burst stop is 1, 2 for CL=2, 3 respectively.  
Using burst stop command, random mode it is possible only at full page burst  
length.  
Burst Stop  
Before the end of burst, Row precharge command of the same bank stops read/write  
burst with Row precharge.  
RAS interrupt  
(Interrupted by  
Precharge)  
tRDL =1 with DQM, valid DQ after burst stop is 1, 2 for CL = 2, 3 respectively  
During read/write burst with auto precharge, RAS interrupt can not be issued.  
Interrupt  
MODE  
Before the end of burst, new read/write stops read/write burst and starts new  
read/write burst or block write.  
CAS Interrupt  
During read/write burst with auto precharge, CAS interrupt can not be issued.  
14. Mask Function  
1) Normal Write  
I/O masking : By Mask at Write Per Bit Mode, the selected bit planes keep the original data.  
If bit plane 0, 3, 7, 9, 19, 22, 24 and 31 keep the original value.  
i) STEP  
I SMRS(LMR) : Load mask [31-0]=”0111, 1110, 1011, 0111, 1111, 1101, 0111, 0110”  
II Row Active with DSF “H” : Write Per Bit Mode Enable  
III Perform Normal Write  
i) ILLUSTRATION  
I/O (=DQ)  
External Data-in  
DQMi  
31  
24  
23  
16  
15  
8
7
0
1 1 1 1 1 1 1 1  
DQM3=0  
1 1 1 1 1 1 1 1  
DQM2=0  
0 0 0 0 0 0 0 0  
DQM1=0  
0 0 0 0 0 0 0 0  
DQM0=1  
Mask Register  
Before Write  
After Write  
0 1 1 1 1 1 1 0  
0 0 0 0 0 0 0 0  
0 1 1 1 1 1 1 0  
1 0 1 1 0 1 1 1  
0 0 0 0 0 0 0 0  
1 0 1 1 0 1 1 1  
1 1 1 1 1 1 0 1  
1 1 1 1 1 1 1 1  
0 0 0 0 0 0 1 0  
0 1 1 1 0 1 1 0  
1 1 1 1 1 1 1 1  
1 1 1 1 1 1 1 1  
Note 1  
2) Block Write  
Pixel masking : By Pixel Data issued through DQ pin, the selected pixels keep the original data.  
See PIXEL TO DQ MAPPING TABLE.  
If Pixel 0, 4, 9, 13, 18, 22, 27 and 31 keep the original white color.  
Assume 8bpp  
White = “0000, 0000”, Red = “1010, 0011”, Green = “1110, 0001”, Yellow = “0000, 1111”, Blue = “1100, 0011”  
i) STEP  
I SMRS(LCR) : Load color (for 8bpp, through x32 DQ color0-3 are loaded into color registers)  
Load (color3, color2, color1, color0) = (Blue, Green, Yellow, Red)  
= ”1100, 0011, 1110, 0001, 0000, 1111, 1010, 0011 ”  
II Row Active with DSF “L” : I/O Mask by Write Per Bit Mode Disable  
III Block write with DQ[31-0] = “0111, 0111, 1011, 1011, 1101, 1101, 1110, 1110”  
* Note : 1. DQM byte masking.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2001  
Revision : 1.6 27/54  
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