M32L1632512A
Read & Write Cycle with Auto Precharge @ Burst Length =4
11
12
13
15
17
19
1
2
3
9
10
14
16
18
0
6
8
4
5
7
C L O C K
C K E
H IG H
C S
R A S
C A S
R a
C a
R b
C b
A D D R
A10
A9
R a
R b
W E
D S F
tR C D
D Q M
D Q C L = 2
Qa3
Qa2
Qa0
Qa2
Qa1
D b3
D b2
Qa1
Qa0
D b0
D b2
Db1
D b1
D b0
Qa3
Db3
C L = 3
* N ot e
1
Rea d w it h
Au to Pr ec h ar g e
( B- Ba nk )
Au ot P r ec h ar g e
Star t Poin t
( B- Ba nk )
R ow A c t i v e
(A - B an k )
R ead w it h
Au to Pr ec h arg e
( A - Ba nk )
Au ot Pr ec h ar g e
Star t Poin t
( A- Ba nk )
Ro w A c ti ve
( B- Ba nk )
:D o n ' t C a r e
*Note : 1. Any command to A Bank is not allowed in this period.
RP is determined from at auto precharge start point.
t
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2001
Revision : 1.6 45/54
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
