M32L1632512A
Block Write cycle (with Auto Precharge)
12
9
11
13
14
15
16
17
18
19
1
2
3
4
7
8
10
5
6
0
C L O C K
H I G H
C K E
C S
R A S
C A S
* N ot e 4
R Aa
CB b
CA b
C Ba
CAa
RBa
A D D R
A10
A9
RAa
RBa
W E
D SF
* N o t e 2
tB W C
D Q M
* N ot e 3
* N o t e 1
P ix e l
M a s k
P i x e l
M a s k
P ix e l
M a s k
P i xe l
M a s k
D Q
Mas ked
Bl oc k W r i t e
(A -B an k )
R ow Ac t i ve
( B- Ban k )
Row Ac t i ve w i t h
W r i te- per - Bi t
Enabl e
Bl ock W r i t e w i t h
Auto P rechar ge
( B- Bank )
Bl oc k W r i t e
( B- Ban k )
M asked
( A- Bank )
Bl ock W r i t e w i th
Auto Pr echar ge
( A- Bank)
:D on't C ar e
*Note : 1. Column Mask (DQi = L : Mask, DQi = H : Non Mask)
2. BWC : Block Write Cycle time
t
3. At Block Write, second cycle should be in NOP.
Other Bank can be active or precharge.
4. At Block Write. CA0-2 are ignored.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2001
Revision : 1.6 38/54
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
