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EN29LV160AB-70UIP 参数 Datasheet PDF下载

EN29LV160AB-70UIP图片预览
型号: EN29LV160AB-70UIP
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 1MX16, 70ns, PDSO44, SOP-44]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 44 页 / 1435 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN29LV160A  
Chip Erase Command  
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two  
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed  
by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does  
not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically  
preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The  
system is not required to provide any controls or timings during these operations. The Command  
Definitions table shows the address and data requirements for the chip erase command sequence.  
Any commands written to the chip during the Embedded Chip Erase algorithm are ignored.  
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write  
Operation Status” for information on these status bits. When the Embedded Erase algorithm is  
complete, the device returns to reading array data and addresses are no longer latched.  
Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations  
tables in “AC Characteristics” for parameters, and to the Chip/Sector Erase Operation Timings for  
timing waveforms.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing  
two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then  
followed by the address of the sector to be erased, and the sector erase command. The Command  
Definitions table shows the address and data requirements for the sector erase command sequence.  
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other  
commands are ignored.  
When the Embedded Erase algorithm is complete, the device returns to reading array data and  
addresses are no longer latched. The system can determine the status of the erase operation by  
using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits.  
Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations  
tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing  
diagram for timing waveforms.  
Erase Suspend / Resume Command  
The Erase Suspend command allows the system to interrupt a sector erase operation and then read  
data from, or program data to, any sector not selected for erasure. This command is valid only during  
the sector erase operation. The Erase Suspend command is ignored if written during the chip erase  
operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase  
Suspend command.  
When the Erase Suspend command is written during a sector erase operation, the device requires a  
maximum of 20 µs to suspend the erase operation.  
After the erase operation has been suspended, the system can read array data from or program data  
to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.)  
Normal read and write timings and command definitions apply. Reading at any address within erase-  
suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2  
together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation  
Status” for information on these status bits.  
After an erase-suspended program operation is complete, the system can once again read array  
data within non-suspended sectors. The system can determine the status of the program operation  
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
16  
Rev. I, Issue Date: 2008/07/17  
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