EN29LV160A
COMMAND DEFINITIONS
The operations of the EN29LV160A are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the specified
operation are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect
data values or improper sequences will reset the device to Read Mode.
Table 9. EN29LV160A Command Definitions
Bus Cycles
1st
2nd
Write Cycle
3rd
Write Cycle
4th
5th
6th
Command
Sequence
Write Cycle
Write Cycle
Write Cycle
Write Cycle
Add
RA
xxx
Data Add
Data Add
Data Add
Data
Add
Data Add
Data
Read
Reset
1
1
RD
F0
000
100
000
200
x01
x02
7F
1C
7F
1C
22C4
C4
Word
Byte
555
2AA
555
555
90
AAA
Manufacturer
ID
4
AA
55
AAA
Device ID
Top Boot
Word
Byte
555
AAA
2AA
555
555
90
4
4
AA
AA
55
55
AAA
Device ID
Bottom Boot
Word
Byte
555
2AA
555
x01
2249
49
90
AAA
555
AAA
x02
2AA
(SA) XX00
X02
(SA) 00
Word
Byte
555
555
90
AAA
Sector Protect
Verify
XX01
4
AA
55
AAA
555
X04
01
Word
Byte
Word
Byte
Word
Byte
555
AAA
555
AAA
555
AAA
xxx
2AA
555
2AA
555
2AA
555
555
A0
Program
4
6
6
AA
AA
AA
55
55
55
PA
PD
AAA
555
AAA
555
AAA
555
AAA
2AA
555
2AA
555
555
10
Chip Erase
80
AA
AA
55
55
AAA
555
AAA
Sector Erase
80
SA
30
Erase Suspend
Erase Resume
1
1
B0
30
xxx
Word
Byte
55
AA
CFI Query
1
98
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read
array data using the standard read timings, with the only difference in that if it reads at an address
within erase suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same
exception.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
14
Rev. I, Issue Date: 2008/07/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
