EN29SL800
Table 9. AC CHARACTERISTICS
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 1.65-2.2V)
Write (Erase/Program) Operations
Parameter
Symbols
Speed Options
Description
Write Cycle Time
JEDEC
Standard
-70
-90
Unit
Min
Min
Min
Min
Min
Min
Min
70
90
ns
tAVAV
tWC
0
45
30
0
0
45
45
0
ns
ns
ns
ns
ns
ns
tAVWL
tWLAX
tDVWH
tWHDX
tAS
tAH
Address Setup Time
Address Hold Time
Data Setup Time
tDS
tDH
tOES
tGHWL
tCS
Data Hold Time
0
0
Output Enable Setup Time
Read Recovery Time before
Write (OE# High to WE# Low)
0
0
tGHWL
tELWL
tWHEH
tWLWH
tWHDL
CE# SetupTime
CE# Hold Time
Min
Min
Min
Min
0
0
0
0
ns
ns
ns
ns
tCH
35
20
45
20
tWP
Write Pulse Width
tWPH
Write Pulse Width High
Typ
5
5
µs
Programming Operation
(Word AND Byte Mode)
tWHWH1
tWHWH1
Max
Typ
7
7
µs
s
0.5
0.5
tWHWH2 tWHWH2
Sector Erase Operation
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
29
Rev. D, Issue Date: 2006/11/06
EON [ EON SILICON SOLUTION INC. ]
