EN29SL800
Table 10. AC CHARACTERISTICS
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 1.65-2.2V)
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
Speed Options
-70
-90
Unit
JEDEC
Standard
Description
Min
Min
Min
Min
Min
Min
Min
70
90
ns
tAVAV
tWC
Write Cycle Time
0
45
30
0
0
45
45
0
ns
ns
ns
ns
ns
ns
tAVEL
tELAX
tDVEH
tEHDX
tAS
Address Setup Time
Address Hold Time
Data Setup Time
tAH
tDS
tDH
tOES
Data Hold Time
0
0
Output Enable Setup Time
Read Recovery Time before
Write (OE# High to CE# Low)
0
0
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
tGHEL
tWS
Min
Min
Min
Min
Typ
Max
Typ
0
0
0
0
ns
ns
ns
ns
µs
µs
s
WE# SetupTime
WE# Hold Time
tWH
35
20
5
45
20
5
tCP
CE# Pulse Width
CE# Pulse Width High
tCPH
Programming Operation
(byte AND word mode)
tWHWH1 tWHWH1
tWHWH2 tWHWH2
7
7
0.5
0.5
Sector Erase Operation
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
30
Rev. D, Issue Date: 2006/11/06
EON [ EON SILICON SOLUTION INC. ]
