EN29SL800
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Limits
Max
Parameter
Comments
Typ
Unit
Sector Erase Time
Chip Erase Time
0.5
10
sec
Excludes 00H programming prior
to erasure
8
5
7
sec
µs
Byte Programming Time
Word Programming Time
µs
Excludes system level overhead
Minimum 100K cycles
Byte
5.3
3.7
Chip Programming
sec
Time
Word
Erase/Program Endurance
100K
cycles
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset# and OE#)
-1.0 V
12.0 V
Input voltage with respect to Vss on all I/O Pins
Vcc Current
-1.0 V
Vcc + 1.0 V
100 mA
-100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
( VCC = 1.65-2.2V)
Parameter Symbol
Parameter Description
Test Setup
= 0
Typ
Max
Unit
C
IN
V
IN
Input Capacitance
6
7.5
pF
C
V
= 0
OUT
OUT
Output Capacitance
8.5
7.5
12
9
pF
pF
C
V
= 0
IN2
IN
Control Pin Capacitance
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Years
Minimum Pattern Data Retention Time
125°C
20
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
31
Rev. D, Issue Date: 2006/11/06
EON [ EON SILICON SOLUTION INC. ]
