EN29LV641H/L EN29LV640U
Addresses
27h
Data
0017h
0001h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
007Eh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Description
Device Size = 2N bytes
28h
29h
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Table 8. Primary Vendor-specific Extended Query
Addresses
40h
Data
Description
Query-unique ASCII string “PRI”
0050h
0052h
0049h
0031h
0033h
41h
42h
43h
44h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required, 1 = Not Required
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
Simultaneous Operation
00 = Not Supported, 01 = Supported
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
Minimum ACC (Acceleration) Supply Voltage
00 = Not Supported, DQ7-DQ4 : Volts, DQ3-DQ0 : 100mV
Maximum ACC (Acceleration) Supply Voltage
00 = Not Supported, DQ7-DQ4 : Volts, DQ3-DQ0 : 100mV
00h = Uniform Sector Devices
45h
46h
47h
48h
0004h
0002h
0004h
0001h
49h
0004h
4Ah
4Bh
4Ch
4Dh
0000h
0000h
0000h
00A5h
4Eh
4Fh
00B5h
00XXh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
15
Rev. B, Issue Date: 2005/06/27
EON [ EON SILICON SOLUTION INC. ]
