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EN29LV641H-70TCP 参数 Datasheet PDF下载

EN29LV641H-70TCP图片预览
型号: EN29LV641H-70TCP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 4096K ×16位)快闪记忆体, CMOS 3.0伏只统一部门快闪记忆体 [64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory]
分类和应用:
文件页数/大小: 46 页 / 523 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV641H/L EN29LV640U  
Reading Array Data  
The device is automatically set to reading array data after power up. No commands are required to  
retrieve data. The device is also ready to read array data after completing an Embedded Program or  
Embedded Erase algorithm.  
Following an Sector Erase Suspend command, Sector Erase Suspend mode is entered. The system  
can read array data using the standard read timings from sectors other than the one which is being  
erase-suspended. If the system reads at an address within erase-suspended sectors, the device  
outputs status data. After completing a programming operation in the Sector Erase Suspend mode,  
the system may once again read array data with the same exception.  
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high  
during an active program or erase operation or while in the autoselect mode. See next section for  
details on Reset.  
Reset Command  
Writing the reset command to the device resets the device to reading array data. Address bits are  
don’t-care for this command.  
The reset command may be written between the cycle sequences in an erase command sequence  
before erasing begins. This resets the device to reading array data. Once erasure begins, however,  
the device ignores reset commands until the operation is complete. The reset command may be  
written between the cycle sequences in a program command sequence before programming begins.  
This resets the device to reading array data (also applies to programming in Sector Erase Suspend  
mode). Once programming begins, however, the device ignores reset commands until the operation  
is complete.  
The reset command may be written between the cycle sequences in an autoselect command  
sequence. Once in the autoselect mode, the reset command must be written to return to reading  
array data.  
If DQ5 goes high during a program or erase operation, writing the reset command returns the device  
to reading array data (also applies in Sector Erase Suspend mode).  
Autoselect Command Sequence  
The autoselect command sequence allows the host system to access the manufacturer and devices  
ID codes, and determine whether or not a sector group is protected. The Command Definitions table  
shows the address and data requirements. This is an alternative to the method that requires VID on  
address bit A9 and is intended for commercial programmers.  
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.  
Autoselect mode is then entered and the system may read at addresses shown in Table 9 any  
number of times, without needing another command sequence.  
The system must write the reset command to exit the autoselect mode and return to reading array  
data.  
Word Programming Command  
Programming is performed by using a four-bus-cycle operation (two unlock write cycles followed by  
the Program Setup command and Program Data Write cycle). When the program command is  
executed, no additional CPU controls or timings are necessary. An internal timer terminates the  
program operation automatically. Address is latched on the falling edge of CE# or WE#, whichever is  
last; data is latched on the rising edge of CE# or WE#, whichever is first.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
18  
Rev. B, Issue Date: 2005/06/27  
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