EN29LV400A
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
Speed Options
Description
JEDEC
Standard
-45R
-55R
-70
-90
Unit
Min
Min
Min
Min
Min
Min
45
55
70
90
ns
Write Cycle Time
tAVAV
tWC
0
35
20
0
0
45
25
0
0
45
30
0
0
45
45
0
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
Data Setup Time
tAVEL
tELAX
tDVEH
tEHDX
tAS
tAH
tDS
tDH
tOES
Data Hold Time
0
0
0
0
Output Enable Setup Time
Min
Min
0
0
0
0
ns
ns
Output Enable Read
tOEH
Hold Time
Toggle and
10
10
10
10
Data# Polling
Read Recovery Time before
Write ( High to Low)
Min
0
0
0
0
ns
tGHEL
tGHEL
OE
CE
Min
Min
Min
Min
Typ
Max
Typ
Min
Min
0
0
0
0
0
0
0
0
ns
ns
ns
ns
µs
µs
s
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# SetupTime
WE# Hold Time
Write Pulse Width
25
20
8
30
20
8
35
20
45
20
tCPH
Write Pulse Width High
8
8
tWHWH1 tWHWH1
Programming Operation
(byte AND word mode)
300
0.5
50
500
300
0.5
50
500
300
0.5
50
300
0.5
50
tWHWH2 tWHWH2
Sector Erase Operation
Vcc Setup Time
µs
ns
tVCS
500
500
tVIDR
Rise Time to V
ID
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
29
Rev. A, Issue Date: 2005/01/07
EON [ EON SILICON SOLUTION INC. ]
