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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Figure 8. AC Waveforms for DATA# Polling During Embedded Algorithm  
Operations  
tRC  
VA  
Addresses  
CE#  
VA  
VA  
tACC  
tCH  
tCE  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
Comple-  
ment  
True  
Complement  
Status Data  
Valid Data  
Valid Data  
DQ[7]  
Status  
Data  
True  
DQ[6:0]  
tBUSY  
RY/BY#  
Notes:  
1. VA=Valid Address for reading Data# Polling status data  
2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle.  
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm  
Operations  
tRC  
Addresses  
CE#  
VA  
VA  
VA  
VA  
tACC  
tCE  
tCH  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
Valid Status  
(second  
Valid Data  
Valid Status  
(first read)  
Valid Status  
DQ6, DQ2  
RY/BY#  
tBUSY  
(stops toggling)  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
33  
Rev. A, Issue Date: 2005/01/07  
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