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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Figure 7. Program Operation Timings  
Program Command Sequence (last 2 cycles)  
Program Command Sequence (last 2 cycles)  
tWC  
tAS  
tAH  
Addresses  
CE#  
0x555  
PA  
PA  
PA  
tGHWL  
tWP  
OE#  
WE#  
tCH  
tWPH  
tCS  
tWHWH1  
Data  
OxA0  
PD  
Status  
DOUT  
tDS  
tRB  
tBUSY  
tDH  
RY/BY#  
VCC  
tVCS  
Notes:  
1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address.  
2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid  
command sequence.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
32  
Rev. A, Issue Date: 2005/01/07  
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