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EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EGBH-TT  
Electrical Specifications  
All voltages are referenced to VSS (GND).  
After power up, execute power up sequence and initialization sequence before proper device operation is achieved  
(refer to the Power up sequence).  
Absolute Maximum Ratings  
Parameter  
Symbol  
VT  
Rating  
Unit  
V
Note  
Voltage on any pin relative to VSS  
Supply voltage relative to VSS  
Short circuit output current  
Power dissipation  
–0.5 to +2.3  
–0.5 to +2.3  
50  
VDD  
IOS  
PD  
V
mA  
W
1.0  
Operating ambient temperature  
Storage temperature  
TA  
–20 to +85  
–55 to +125  
°C  
°C  
Tstg  
Caution  
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause  
permanent damage. The device is not meant to be operated under conditions outside the limits  
described in the operational section of this specification. Exposure to Absolute Maximum Rating  
conditions for extended periods may affect device reliability.  
Recommended DC Operating Conditions (TA = –20°C to +85°C)  
Parameter  
Symbol  
VDD, VDDQ  
VSS, VSSQ  
VIH  
min.  
max.  
Unit  
V
Notes  
Supply voltage  
1.7  
1.9  
1
2
3
4
0
0
V
Input high voltage  
Input low voltage  
0.8 × VDD  
VDD + 0.3  
0.3  
V
VIL  
–0.3  
V
Notes: 1. The supply voltage with all VDDand VDDQ pins must be on the same level.  
2. The supply voltage with all VSS and VSSQ pins must be on the same level.  
3. The peak of VIH = VDD + 0.5V (pulse width at VIH (max.) 3ns).  
4. The bottom of VIL = VSS – 1.0V (pulse width at VIL (min.) 3ns).  
Preliminary Data Sheet E1200E40 (Ver. 4.0)  
4