EDS2532EGBH-TT
DC Characteristics 2 (TA = –20°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
Parameter
Symbol
ILI
min.
max.
2.0
1.5
—
Unit
µA
µA
V
Test condition
Notes
Input leakage current
Output leakage current
Output high voltage
Output low voltage
–2.0
0 ≤ VIN ≤ VDD
ILO
–1.5
0 ≤ VOUT ≤ VDD, DQ = disable
IOH = –0.1 mA
VOH
VOL
VDD –0.2
—
0.2
V
IOL = 0.1 mA
Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)
Notes
Parameter
Symbol
CI1
Pins
min.
1.5
typ.
—
max.
4.0
Unit
pF
Input capacitance
CLK
1, 2, 4
Address, CKE, /CS,
/RAS, /CAS, /WE, 1.5
DQM
CI2
—
4.0
pF
1, 2, 4
Data input/output
capacitance
CI/O
DQ
2.0
—
5.0
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 0.5 × VDDQ, 200mV swing.
3. DQM = VIH to disable DOUT.
4. This parameter is sampled and not 100% tested.
Preliminary Data Sheet E1200E40 (Ver. 4.0)
6
ELPIDA [ ELPIDA MEMORY ]
