EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT AC Electrical Characteristics [DDR3-1600, 1333]
-GL, -GN
1600
-DG, -DJ
1333
Data rate (Mbps)
Parameter
Symbol
tAON
min.
max.
225
min.
max.
250
Unit
ps
Notes
RTT turn-on
−225
−250
7, 12, 37
Asynchronous RTT turn-on delay
tAONPD
tAOF
2
8.5
0.7
8.5
2
8.5
0.7
8.5
ns
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
Asynchronous RTT turn-off delay
(power-down with DLL frozen)
ODT to power-down entry/exit
latency
0.3
0.3
tCK (avg) 8, 12, 37
tAOFPD
tANPD
2
2
ns
WL – 1.0
WL – 1.0
nCK
ODT turn-on Latency
ODTLon
ODTLoff
WL – 2
WL – 2
WL – 2
WL – 2
WL – 2.0 WL – 2.0
WL – 2.0 WL – 2.0
nCK
nCK
ODT turn-off Latency
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODTLcnw WL – 2
ODTLcwn4
WL – 2
WL – 2.0 WL – 2.0
nCK
4 + ODTLoff
4 + ODTLoff nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn8
6 + ODTLoff
6 + ODTLoff nCK
ODT high time without WRIT
command or with WRIT
command and BC4
ODT high time with WRIT
command and BL8
RTT dynamic change skew
Power-up and reset calibration
time
Normal operation full calibration
time
Normal operation short
calibration time
ODTH4
4
4
nCK
nCK
ODTH8
tADC
6
6
0.3
512
0.7
0.3
512
0.7
tCK (avg) 12, 37
tZQinit
nCK
nCK
nCK
tZQoper
tZQCS
256
64
256
64
30
Write Leveling Characteristics [DDR3-1600, 1333]
-GL, -GN
-DG, -DJ
1333
1600
min.
Parameter
Symbol
max.
min.
max.
Unit
nCK
Notes
3
First DQS pulse rising edge after
write leveling mode is
programmed
tWLMRD
40
40
DQS, /DQS delay after write
tWLDQSEN 25
25
nCK
ps
3
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to rising tWLS
165
165
195
DQS, /DQS crossing
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
tWLH
195
ps
Write leveling output delay
tWLO
0
0
7.5
2
0
0
9
2
ns
ns
Write leveling output error
tWLOE
Data Sheet E1375E50 (Ver. 5.0)
56