EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT AC Electrical Characteristics [DDR3-1066, 800]
-AE, -AG
1066
-8A, -8C
800
Data rate (Mbps)
Parameter
Symbol
tAON
min.
max.
300
min.
max.
400
Unit
ps
Notes
7, 12,
37
RTT turn-on
–300
–400
Asynchronous RTT turn-on
delay (power-down with DLL
frozen)
RTT_Nom and RTT_WR turn-
off time from ODTLoff reference
ODT turn-off (power-down
mode)
ODT to power-down entry/exit
latency
tAONPD
2
8.5
2
8.5
ns
tCK
(avg)
8, 12,
37
tAOF
0.3
0.7
8.5
0.3
0.7
8.5
tAOFPD
tANPD
2
2
ns
WL – 1.0
WL – 1.0
nCK
ODT turn-on Latency
ODT turn-off Latency
ODTLon
ODTLoff
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
nCK
ODT Latency for changing from
RTT_Nom to RTT_WR
ODTLcnw WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn4
4 + ODTLoff
4 + ODTLoff nCK
6 + ODTLoff nCK
ODTLcwn8
6 + ODTLoff
ODT high time without WRIT
command or with WRIT
command and BC4
ODT high time with WRIT
command and BL8
ODTH4
4
4
nCK
nCK
ODTH8
tADC
6
6
tCK
(avg)
RTT dynamic change skew
0.3
512
256
64
0.7
0.3
512
256
64
0.7
12, 37
Power-up and reset calibration
time
Normal operation full calibration
time
Normal operation short
calibration time
tZQinit
tZQoper
tZQCS
nCK
nCK
nCK
30
Write Leveling Characteristics [DDR3-1066, 800]
-AE, -AG
-8A, -8C
800
1066
Parameter
Symbol
min.
max.
min.
max.
Unit
nCK
Notes
First DQS pulse rising edge
after write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to
rising DQS, /DQS crossing
tWLMRD
40
40
3
3
tWLDQSEN 25
25
nCK
ps
tWLS
245
325
Write leveling hold time from
rising DQS, /DQS crossing to tWLH
rising CK, /CK crossing
245
325
ps
Write leveling output delay
tWLO
0
0
9
2
0
0
9
2
ns
ns
Write leveling output error
tWLOE
Data Sheet E1375E50 (Ver. 5.0)
60
ELPIDA [ ELPIDA MEMORY ]
