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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)  
max.  
× 8  
Parameter  
Symbol  
IDD0  
Grade  
Unit  
mA  
Test condition  
one bank; tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Operating current  
(ACT-PRE)  
-8E, -8G 85  
-6E 80  
one bank; IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data pattern is same as IDD4W  
Operating current  
(ACT-READ-PRE)  
-8E, -8G 100  
-6E 95  
IDD1  
mA  
all banks idle;  
tCK = tCK (IDD);  
CKE is L;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge power-down  
standby current  
-8E, -8G 10  
-6E 10  
IDD2P  
IDD2Q  
IDD2N  
mA  
mA  
mA  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge quiet standby  
current  
-8E, -8G 35  
-6E 30  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
-8E, -8G 40  
-6E 35  
Idle standby current  
all banks open;  
tCK = tCK (IDD);  
CKE is L;  
Other control and  
address bus inputs  
are STABLE;  
Data bus inputs are  
FLOATING  
-8E, -8G 35  
Fast PDN Exit  
MRS (12) = 0  
IDD3P-F  
IDD3P-S  
mA  
mA  
-6E  
35  
Active power-down  
standby current  
-8E, -8G 20  
-6E 20  
Slow PDN Exit  
MRS (12) = 1  
all banks open;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
-8E, -8G 90  
-6E 80  
Active standby current  
IDD3N  
IDD4R  
mA  
mA  
all banks open, continuous burst reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD),  
tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data pattern is same as IDD4W  
Operating current  
(Burst read operating)  
-8E, -8G 160  
-6E 140  
all banks open, continuous burst writes;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD),  
tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Operating current  
(Burst write operating)  
-8E, -8G 160  
-6E 140  
IDD4W  
mA  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
8