EDE1108AFBG
Electrical Specifications
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
VDD
VDDQ
VIN
Rating
Unit
V
Notes
Power supply voltage
Power supply voltage for output
Input voltage
−1.0 to +2.3
−0.5 to +2.3
−0.5 to +2.3
−0.5 to +2.3
−55 to +100
1.0
1
V
1
V
1
Output voltage
VOUT
Tstg
V
1
Storage temperature
Power dissipation
°C
W
mA
1, 2
1
PD
Short circuit output current
IOUT
50
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
TC
Rating
Unit
Notes
1, 2
Operating case temperature
0 to +95
°C
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Preliminary Data Sheet E1430E20 (Ver. 2.0)
5
ELPIDA [ ELPIDA MEMORY ]
