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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
AC Overshoot/Undershoot Specification  
Parameter  
Pins  
Specification  
Unit  
V
Command, Address,  
CKE, ODT  
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
0.5  
0.5  
V
Maximum overshoot area above VDD  
DDR2-800  
0.66  
0.8  
V-ns  
V-ns  
V-ns  
DDR2-667  
Maximum undershoot area below VSS  
DDR2-800  
0.66  
DDR2-667  
0.8  
0.5  
0.5  
V-ns  
V
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
CK, /CK  
V
Maximum overshoot area above VDD  
DDR2-800, 667  
0.23  
0.23  
V-ns  
V-ns  
Maximum undershoot area below VSS  
DDR2-800, 667  
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
DQ, DQS, /DQS,  
0.5  
0.5  
V
V
RDQS, /RDQS, DM  
Maximum overshoot area above VDDQ  
DDR2-800, 667  
0.23  
0.23  
V-ns  
V-ns  
Maximum undershoot area below VSSQ  
DDR2-800, 667  
Maximum amplitude  
Overshoot area  
VDD, VDDQ  
Volts (V)  
VSS, VSSQ  
Undershoot area  
Time (ns)  
Overshoot/Undershoot Definition  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
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