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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
AC Timing for IDD Test Conditions  
For purposes of IDD testing, the following parameters are to be utilized.  
DDR2-800  
5-5-5  
5
DDR2-800  
6-6-6  
6
DDR2-667  
5-5-5  
5
Parameter  
Unit  
tCK  
ns  
CL (IDD)  
tRCD (IDD)  
tRC (IDD)  
12.5  
57.5  
7.5  
15  
15  
60  
60  
ns  
tRRD (IDD)  
tFAW (IDD)  
tCK (IDD)  
7.5  
7.5  
ns  
35  
35  
37.5  
3
ns  
2.5  
2.5  
ns  
tRAS (min.)(IDD)  
tRAS (max.)(IDD)  
tRP (IDD)  
45  
45  
45  
ns  
70000  
12.5  
127.5  
70000  
15  
70000  
15  
ns  
ns  
tRFC (IDD)  
127.5  
127.5  
ns  
IDD7 Timing Patterns for 8 Banks  
The detailed timings are shown in the IDD7 Timing Patterns for 8 Banks tables.  
Speed bins  
DDR2-667  
DDR2-800  
Timing Patterns  
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D  
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D  
Remark: A = Active. RA = Read with auto precharge. D = Deselect  
Notes: 1. All banks are being interleaved at minimum tRC (IDD) without violating tRRD (IDD) and tFAW (IDD) using  
a Burst length = 4.  
2. Control and address bus inputs are STABLE during DESELECTs.  
3. IOUT = 0mA.  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
10