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E1750E31 参数 Datasheet PDF下载

E1750E31图片预览
型号: E1750E31
PDF下载: 下载PDF文件 查看货源
内容描述: 2G位DDR3L SDRAM [2G bits DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 32 页 / 606 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ2108EEBG, EDJ2116EEBG  
Table 9: IDD2N and IDD3N Measurement-Loop Pattern  
CK,  
/CK  
Sub  
Cycle  
Com-  
A11  
A7  
A3  
A0  
CKE  
-Loop number mand /CS /RAS /CAS /WE ODT BA*3 -Am A10 -A9 -A6 -A2 Data*2  
0
D
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
0
0
0
0
1
D
0
1
2
/D  
/D  
3
4 to 7  
8 to 11  
Repeat Sub-Loop 0, use BA= 1 instead  
Repeat Sub-Loop 0, use BA= 2 instead  
Toggling Static H 2  
3
4
5
6
7
12 to 15 Repeat Sub-Loop 0, use BA= 3 instead  
16 to 19 Repeat Sub-Loop 0, use BA= 4 instead  
20 to 23 Repeat Sub-Loop 0, use BA= 5 instead  
24 to 27 Repeat Sub-Loop 0, use BA= 6 instead  
28 to 31 Repeat Sub-Loop 0, use BA= 7 instead  
Notes: 1. DM must be driven low all the time. DQS, /DQS are MID-LEVEL.  
2. DQ signals are MID-LEVEL.  
3. BA: BA0 to BA2.  
4. Am: m means Most Significant Bit (MSB) of Row address.  
Table 10: IDD2NT and IDDQ2NT Measurement-Loop Pattern  
CK,  
/CK  
Sub  
Cycle  
Com-  
A11  
A7  
A3  
A0  
CKE  
-Loop number mand /CS /RAS /CAS /WE ODT BA*3 -Am A10 -A9 -A6 -A2 Data*2  
0
D
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
0
0
0
0
1
D
0
2
/D  
/D  
3
1
4 to 7  
8 to 11  
Repeat Sub-Loop 0, but ODT = 0 and BA= 1  
Repeat Sub-Loop 0, but ODT = 1 and BA= 2  
Toggling Static H 2  
3
4
5
6
7
12 to 15 Repeat Sub-Loop 0, but ODT = 1 and BA= 3  
16 to 19 Repeat Sub-Loop 0, but ODT = 0 and BA= 4  
20 to 23 Repeat Sub-Loop 0, but ODT = 0 and BA= 5  
24 to 27 Repeat Sub-Loop 0, but ODT = 1 and BA= 6  
28 to 31 Repeat Sub-Loop 0, but ODT = 1 and BA= 7  
Notes: 1. DM must be driven low all the time. DQS, /DQS are MID-LEVEL.  
2. DQ signals are MID-LEVEL.  
3. BA: BA0 to BA2.  
4. Am: m means Most Significant Bit (MSB) of Row address.  
Data Sheet E1750E31 (Ver. 3.1)  
15  
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