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E1750E31 参数 Datasheet PDF下载

E1750E31图片预览
型号: E1750E31
PDF下载: 下载PDF文件 查看货源
内容描述: 2G位DDR3L SDRAM [2G bits DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 32 页 / 606 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ2108EEBG, EDJ2116EEBG  
1.4.2  
Basic IDD and IDDQ Measurement Conditions  
Table 6: Basic IDD and IDDQ Measurement Conditions  
Parameter  
Symbol  
Description  
CKE: H; External clock: on; tCK, nRC, nRAS, CL: see Table 5; BL: 8*1; AL: 0; /CS: H  
between ACT and PRE; Command, address, bank address inputs: partially toggling  
according to Table 7; Data I/O: MID-LEVEL; DM: stable at 0;  
Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 7);  
Output buffer and RTT: enabled in MR*2; ODT signal: stable at 0; Pattern details: see  
Table 7  
Operating one bank  
active precharge  
current  
IDD0  
CKE: H; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 5; BL: 8*1, *6; AL:  
0; /CS: H between ACT, RD and PRE; Command, address, bank address inputs, data  
I/O: partially toggling according to Table 8;  
Operating one bank  
active-read-precharge  
current  
IDD1  
DM: stable at 0; Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,...  
(see Table 8); Output buffer and RTT: enabled in MR*2; ODT Signal: stable at 0;  
Pattern details: see Table 8  
CKE: H; External clock: on; tCK, CL: see Table 5 BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address Inputs: partially toggling according to Table 9;  
data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer  
and RTT: enabled in mode registers*2; ODT signal: stable at 0; pattern details: see  
Table 9  
Precharge standby  
current  
IDD2N  
CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address Inputs: partially toggling according to Table 10;  
data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer  
and RTT: enabled in MR*2; ODT signal: toggling according to Table 10; pattern  
details: see Table 10  
Precharge standby  
ODT current  
IDD2NT  
Precharge standby  
ODT IDDQ current  
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD  
current  
CKE: L; External clock: on; tCK, CL: see Table 5; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL; DM:  
stable at 0; bank activity: all banks closed; output buffer and RTT: EMR*2; ODT  
signal: stable at 0; precharge power down mode: slow exit*3  
IDDQ2NT  
IDD2P0  
Precharge power-down  
current slow exit  
CKE: L; External clock: on; tCK, CL: see Table 6; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;  
DM:stable at 0; bank activity: all banks closed; output buffer and RTT: enabled in  
MR*2; ODT signal: stable at 0; precharge power down mode: fast exit*3  
CKE: H; External clock: On; tCK, CL: see Table 5; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;  
DM: stable at 0;bank activity: all banks closed; output buffer and RTT: enabled in  
MR*2; ODT signal: stable at 0  
Precharge power-down  
current fast exit  
IDD2P1  
IDD2Q  
Precharge quiet  
standby current  
CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address Inputs: partially toggling according to Table 9;  
data I/O: MID-LEVEL; DM: stable at 0;  
bank activity: all banks open; output buffer and RTT: enabled in MR*2;  
ODT signal: stable at 0; pattern details: see Table 9  
CKE: L; External clock: on; tCK, CL: see Table 5; BL: 8*1; AL: 0; /CS: stable at 1;  
Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL;  
DM:stable at 0; bank activity: all banks open; output buffer and RTT:  
enabled in MR*2; ODT signal: stable at 0  
Active standby current  
IDD3N  
IDD3P  
Active power-down  
current  
CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*1, *6; AL: 0; /CS: H between  
RD; Command, address, bank address Inputs: partially toggling according to  
Table 11; data I/O: seamless read  
Operating burst read  
current  
data burst with different data between one burst and the next one according to  
Table 11; DM: stable at 0;  
IDD4R  
bank activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...  
(see Table 11); Output buffer and RTT: enabled in MR*2; ODT signal: stable at 0;  
pattern details: see Table 11  
Operating burst read  
IDDQ current  
Same definition like for IDD4R, however measuring IDDQ current instead of IDD  
current  
IDDQ4R  
Data Sheet E1750E31 (Ver. 3.1)  
11  
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