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CY7C1470V25-200BZC 参数 Datasheet PDF下载

CY7C1470V25-200BZC图片预览
型号: CY7C1470V25-200BZC
PDF下载: 下载PDF文件 查看货源
内容描述: 72兆位(2M X 36/4的M× 18/1米× 72 )流水线SRAM与NOBL架构 [72-Mbit (2 M x 36/4 M x 18/1 M x 72) Pipelined SRAM with NoBL Architecture]
分类和应用: 静态存储器
文件页数/大小: 31 页 / 843 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Switching Waveforms
Read/Write/Timing
1
CLK
t
CENS
t
CENH
t
CH
t
CL
2
t CYC
3
4
5
6
7
8
9
10
CEN
t
CES
t
CEH
CE
ADV/LD
WE
BW
x
ADDRESS
t
AS
A1
t
AH
A2
t
DS
t
DH
A3
A4
t
CO
t
CLZ
t
DOH
A5
t
OEV
A6
t
CHZ
A7
Data
In-Out (DQ)
OE
WRITE
D(A1)
WRITE
D(A2)
D(A1)
D(A2)
D(A2+1)
Q(A3)
Q(A4)
t
OEHZ
Q(A4+1)
D(A5)
Q(A6)
t
DOH
t
OELZ
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
DON’T CARE
UNDEFINED
Notes
22. For this waveform ZZ is tied LOW.
23. When CE is LOW, CE
1
is LOW, CE
2
is HIGH and CE
3
is LOW. When CE is HIGH,CE
1
is HIGH or CE
2
is LOW or CE
3
is HIGH.
24. Order of the burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
Document Number: 38-05290 Rev. *L
Page 23 of 31