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CY7C1470V25-200BZC 参数 Datasheet PDF下载

CY7C1470V25-200BZC图片预览
型号: CY7C1470V25-200BZC
PDF下载: 下载PDF文件 查看货源
内容描述: 72兆位(2M X 36/4的M× 18/1米× 72 )流水线SRAM与NOBL架构 [72-Mbit (2 M x 36/4 M x 18/1 M x 72) Pipelined SRAM with NoBL Architecture]
分类和应用: 静态存储器
文件页数/大小: 31 页 / 843 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Switching Characteristics
Over the Operating Range
Parameter
t
Power[18]
Clock
t
CYC
F
MAX
t
CH
t
CL
Output Times
t
CO
t
OEV
t
DOH
t
CHZ
t
CLZ
t
EOHZ
t
EOLZ
Set-up Times
t
AS
t
DS
t
CENS
t
WES
t
ALS
t
CES
Hold Times
t
AH
t
DH
t
CENH
t
WEH
t
ALH
t
CEH
Address hold after CLK rise
Data input hold after CLK rise
CEN hold after CLK rise
WE, BW
x
hold after CLK rise
ADV/LD hold after CLK rise
Chip select hold after CLK rise
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
Address set-up before CLK rise
Data input set-up before CLK rise
CEN set-up before CLK rise
WE, BW
x
set-up before CLK rise
ADV/LD set-up before CLK rise
Chip select set-up
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
Data output valid after CLK rise
OE LOW to output valid
Data output hold after CLK rise
Clock to high Z
Clock to low Z
OE HIGH to output high Z
OE LOW to Output low Z
1.3
1.3
0
3.0
3.0
3.0
3.0
1.3
1.3
0
3.0
3.0
3.0
3.0
1.5
1.5
0
3.4
3.4
3.4
3.4
ns
ns
ns
ns
ns
ns
ns
Clock cycle time
Maximum operating frequency
Clock HIGH
Clock LOW
4.0
2.0
2.0
250
5.0
2.0
2.0
200
6.0
2.2
2.2
167
ns
MHz
ns
ns
Description
V
CC
(typical) to the first access read or write
–250
Min
1
Max
Min
1
–200
Max
Min
1
–167
Max
Unit
ms
Notes
16. Timing reference is 1.25 V when V
DDQ
= 2.5 V and 0.9 V when V
DDQ
= 1.8 V.
17. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
18. This part has a voltage regulator internally; t
power
is the time power needs to be supplied above V
DD
minimum initially, before a read or write operation can be
initiated.
19. t
CHZ
, t
CLZ
, t
EOLZ
, and t
EOHZ
are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
20. At any given voltage and temperature, t
EOHZ
is less than t
EOLZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve high Z prior to low Z under the same system conditions.
21. This parameter is sampled and not 100% tested.
Document Number: 38-05290 Rev. *L
Page 22 of 31