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CY7C1350G-133AXC 参数 Datasheet PDF下载

CY7C1350G-133AXC图片预览
型号: CY7C1350G-133AXC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 128K ×36 )流水线SRAM与NOBL ?架构 [4-Mbit (128K x 36) Pipelined SRAM with NoBL? Architecture]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 15 页 / 336 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1350G
Truth Table
[2, 3, 4, 5, 6, 7, 8]
(continued)
Operation
WRITE ABORT (Continue Burst)
IGNORE CLOCK EDGE (Stall)
SNOOZE MODE
Address Used
Next
Current
None
CE
L
X
X
X
ZZ
L
L
L
H
ADV/LD
L
H
X
X
WE BW
x
OE CEN
L
X
X
X
H
H
X
X
X
X
X
X
L
L
H
X
CLK
L-H
L-H
L-H
X
DQ
Tri-State
Tri-State
Tri-State
NOP/WRITE ABORT (Begin Burst) None
Partial Truth Table for Read/Write
[2, 3, 9]
Function
Read
Write
No bytes written
Write Byte A
(DQ
A
and DQP
A
)
Write Byte B
(DQ
B
and DQP
B
)
Write Bytes A, B
Write Byte C
(DQ
C
and DQP
C
)
Write Bytes C,A
Write Bytes C, B
Write Bytes C, B, A
Write Byte D
(DQ
D
and DQP
D
)
Write Bytes D, A
Write Bytes D, B
Write Bytes D, B, A
Write Bytes D, C
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
WE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
BW
D
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
BW
C
X
H
H
H
H
L
L
L
L
H
H
H
H
L
L
L
L
BW
B
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
BW
A
X
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
ZZ Mode Electrical Characteristics
Parameter
I
DDZZ
t
ZZS
t
ZZREC
t
ZZI
t
RZZI
Description
Snooze mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to snooze current
ZZ inactive to exit snooze current
Test Conditions
ZZ > V
DD
0.2V
ZZ > V
DD
0.2V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
0
2t
CYC
2t
CYC
Min.
Max.
40
2t
CYC
Unit
mA
ns
ns
ns
ns
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW
X
is valid. Appropriate write will be done on which byte write is active.
Document #: 38-05524 Rev. *F
Page 6 of 15