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CY7C1350G-133AXC 参数 Datasheet PDF下载

CY7C1350G-133AXC图片预览
型号: CY7C1350G-133AXC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 128K ×36 )流水线SRAM与NOBL ?架构 [4-Mbit (128K x 36) Pipelined SRAM with NoBL? Architecture]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 15 页 / 336 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1350G
Pin Configurations
(continued)
119-Ball BGA Pinout
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC/576M
NC/1G
DQ
C
DQ
C
V
DDQ
DQ
C
DQ
C
V
DDQ
DQ
D
DQ
D
V
DDQ
DQ
D
DQ
D
NC/144M
NC
V
DDQ
2
A
CE
2
A
DQP
C
DQ
C
DQ
C
DQ
C
DQ
C
V
DD
DQ
D
DQ
D
DQ
D
DQ
D
DQP
D
A
NC/72M
NC
3
A
A
A
V
SS
V
SS
V
SS
BW
C
V
SS
V
SS
V
SS
BW
D
V
SS
V
SS
V
SS
MODE
A
NC
4
NC/18M
ADV/LD
V
DD
NC
CE
1
OE
NC/9M
WE
V
DD
CLK
NC
CEN
A1
A0
V
DD
A
NC
5
A
A
A
V
SS
V
SS
V
SS
BW
B
V
SS
V
SS
V
SS
BW
A
V
SS
V
SS
V
SS
NC
A
NC
6
A
CE
3
A
DQP
B
DQ
B
DQ
B
DQ
B
DQ
B
V
DD
DQ
A
DQ
A
DQ
A
DQ
A
DQP
A
A
NC/36M
NC
7
V
DDQ
NC
NC
DQ
B
DQ
B
V
DDQ
DQ
B
DQ
B
V
DDQ
DQ
A
DQ
A
V
DDQ
DQ
A
DQ
A
NC/288M
ZZ
V
DDQ
Pin Definitions
Name
A0, A1, A
BW
[A:D]
WE
ADV/LD
I/O
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Description
Address Inputs used to select one of the 128K address locations.
Sampled at the rising edge
of the CLK. A
[1:0]
are fed to the two-bit burst counter.
Byte Write Inputs, active LOW.
Qualified with WE to conduct writes to the SRAM. Sampled on
the rising edge of CLK.
Write Enable Input, active LOW.
Sampled on the rising edge of CLK if CEN is active LOW. This
signal must be asserted LOW to initiate a write sequence.
Advance/Load Input.
Used to advance the on-chip address counter or load a new address. When
HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new
address can be loaded into the device for an access. After being deselected, ADV/LD should be
driven LOW in order to load a new address.
Clock Input.
Used to capture all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
Chip Enable 1 Input, active LOW.
Sampled on the rising edge of CLK. Used in conjunction with
CE
2
and CE
3
to select/deselect the device.
Chip Enable 2 Input, active HIGH.
Sampled on the rising edge of CLK. Used in conjunction with
CE
1
and CE
3
to select/deselect the device.
Chip Enable 3 Input, active LOW.
Sampled on the rising edge of CLK. Used in conjunction with
CE
1
and CE
2
to select/deselect the device.
Output Enable, asynchronous input, active LOW.
Combined with the synchronous logic block
inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to
behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE
is masked during the data portion of a write sequence, during the first clock when emerging from
a deselected state, when the device has been deselected.
Clock Enable Input, active LOW.
When asserted LOW the Clock signal is recognized by the
SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not
deselect the device, CEN can be used to extend the previous cycle when required.
CLK
CE
1
CE
2
CE
3
OE
Input-Clock
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Asynchronous
CEN
Input-
Synchronous
Document #: 38-05524 Rev. *F
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