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CY62256NLL-70PXC 参数 Datasheet PDF下载

CY62256NLL-70PXC图片预览
型号: CY62256NLL-70PXC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 710 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号CY62256NLL-70PXC的Datasheet PDF文件第1页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第2页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第3页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第5页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第6页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第7页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第8页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第9页  
CY62256N  
Thermal Resistance[5]  
Parameter  
Description  
Test Conditions  
DIP  
SOIC  
TSOP  
RTSOP  
Unit  
ΘJA  
Thermal Resistance  
(Junction to Ambient)  
Still Air, soldered on a 4.25 x 1.125 75.61  
inch, 4-layer printed circuit board  
76.56  
93.89  
93.89  
°C/W  
ΘJC  
Thermal Resistance  
(Junction to Case)  
43.12  
36.07  
24.64  
24.64  
°C/W  
AC Test Loads and Waveforms  
R1 1800  
R1 1800Ω  
5V  
5V  
OUTPUT  
ALL INPUT PULSES  
90%  
OUTPUT  
3.0V  
90%  
10%  
10%  
R2  
990Ω  
R2  
990Ω  
100 pF  
5 pF  
GND  
< 5 ns  
< 5 ns  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
(a)  
(b)  
Equivalent to:  
THÉVENIN EQUIVALENT  
639Ω  
OUTPUT  
1.77V  
Data Retention Characteristics  
Parameter  
VDR  
Description  
VCC for Data Retention  
Data Retention Current  
Conditions[6]  
Min.  
Typ.[2]  
Max.  
Unit  
V
2.0  
ICCDR  
L
VCC = 2.0V, CE > VCC 0.3V,  
VIN > VCC 0.3V, or VIN < 0.3V  
2
50  
5
µA  
µA  
µA  
µA  
ns  
LL-Comm’l  
0.1  
0.1  
0.1  
LL - Ind’l/Auto-A  
LL - Auto-E  
10  
10  
[8]  
tCDR  
Chip Deselect to Data Retention Time  
Operation Recovery Time  
0
[8]  
tR  
tRC  
ns  
Data Retention Waveform  
DATA RETENTION MODE  
3.0V  
3.0V  
V
DR  
> 2V  
V
CC  
t
t
R
CDR  
CE  
Note:  
6. No input may exceed V + 0.5V.  
CC  
Document #: 001-06511 Rev. *A  
Page 4 of 13  
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