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CY62256NLL-70PXC 参数 Datasheet PDF下载

CY62256NLL-70PXC图片预览
型号: CY62256NLL-70PXC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 710 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62256N
256K (32K x 8) Static RAM
Features
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
• High speed: 55 ns
• Voltage range: 4.5V–5.5V operation
• Low active power
— 275 mW (max.)
• Low standby power (LL version)
82.5
µW
(max.)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in pb-free and non Pb-free 28-lead (600-mil)
PDIP, 28-lead (300-mil) narrow SOIC, 28-lead TSOP-I
and 28-lead Reverse TSOP-I packages
Functional Description
[1]
The CY62256N is a high-performance CMOS static RAM
organized as 32K words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and tri-state drivers. This device has an
automatic power-down feature, reducing the power
consumption by 99.9% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH.
Logic Block Diagram
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
CE
WE
OE
A
14
A
13
A
12
A
11
A
1
A
0
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
32K x 8
Y
ARRA
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-06511 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 3, 2006