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CY62256NLL-70PXC 参数 Datasheet PDF下载

CY62256NLL-70PXC图片预览
型号: CY62256NLL-70PXC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 710 K
品牌: CYPRESS [ CYPRESS ]
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CY62256N  
Output Current into Outputs (LOW)............................. 20 mA  
Maximum Ratings  
Static Discharge Voltage.......................................... > 2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-up Current.................................................... > 200 mA  
Storage Temperature .................................65°C to +150°C  
Operating Range  
Ambient Temperature with  
Power Applied..............................................-55°C to +125°C  
Range  
Ambient Temperature (TA)[7]  
VCC  
Supply Voltage to Ground Potential  
(Pin 28 to Pin 14) ........................................... –0.5V to +7.0V  
Commercial  
Industrial  
0°C to +70°C  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +125°C  
5V ± 10%  
5V ± 10%  
5V ± 10%  
5V ± 10%  
DC Voltage Applied to Outputs  
in High-Z State[3] ....................................–0.5V to VCC + 0.5V  
Automotive-A  
Automotive-E  
DC Input Voltage[3].................................–0.5V to VCC + 0.5V  
Electrical Characteristics Over the Operating Range  
-55  
-70  
Parameter  
VOH  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Test Conditions  
VCC = Min., IOH = 1.0 mA  
VCC = Min., IOL = 2.1 mA  
Min. Typ.[2] Max. Min. Typ.[2] Max. Unit  
2.4  
2.2  
2.4  
V
V
V
VOL  
0.4  
0.4  
VIH  
VCC  
2.2  
VCC  
+0.5V  
+0.5V  
VIL  
IIX  
Input LOW Voltage  
–0.5  
–0.5  
0.8  
–0.5  
0.8  
+0.5  
+0.5  
50  
V
Input Leakage Current GND < VI < VCC  
+0.5 –0.5  
+0.5 –0.5  
µA  
µA  
mA  
IOZ  
ICC  
Output Leakage Current GND < VO < VCC, Output Disabled –0.5  
VCC Operating Supply VCC = Max.,  
Current  
L-Comm’l/  
Ind’l  
25  
IOUT = 0 mA,  
f = fMAX = 1/tRC  
LL-Comm’l  
LL - Ind’l  
LL - Auto-A  
LL - Auto-E  
L
25  
25  
25  
50  
50  
50  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
µA  
25  
25  
25  
50  
50  
50  
ISB1  
Automatic CE  
Max. VCC, CE > VIH,  
Power-down Current— VIN > VIH or VIN < VIL,  
0.4  
0.3  
0.3  
0.3  
0.6  
0.5  
0.5  
0.5  
LL-Comm’l  
LL - Ind’l  
LL - Auto-A  
LL - Auto-E  
L
TTL Inputs  
f = fMAX  
0.3  
0.3  
0.3  
0.5  
0.5  
0.5  
ISB2  
Automatic CE  
Max. VCC  
,
2
50  
5
Power-down Current— CE > VCC 0.3V  
LL-Comm’l  
LL - Ind’l  
LL - Auto-A  
LL - Auto-E  
0.1  
0.1  
0.1  
µA  
CMOS Inputs  
V
IN > VCC 0.3V, or  
VIN < 0.3V, f = 0  
0.1  
0.1  
0.1  
10  
10  
15  
10  
10  
µA  
µA  
µA  
Capacitance[8]  
Parameter  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
TA = 25°C, f = 1 MHz,  
CC = 5.0V  
Max.  
Unit  
CIN  
6
8
pF  
pF  
V
COUT  
Notes:  
3. V (min.) = 2.0V for pulse durations of less than 20 ns.  
IL  
4. T is the “Instant-On” case temperature.  
A
5. Tested initially and after any design or process changes that may affect these parameters.  
Document #: 001-06511 Rev. *A  
Page 3 of 13  
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