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CY62256NLL-70PXC 参数 Datasheet PDF下载

CY62256NLL-70PXC图片预览
型号: CY62256NLL-70PXC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 710 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号CY62256NLL-70PXC的Datasheet PDF文件第2页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第3页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第4页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第5页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第7页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第8页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第9页浏览型号CY62256NLL-70PXC的Datasheet PDF文件第10页  
CY62256N  
Switching Waveforms (continued)  
Read Cycle No. 2[13, 14]  
t
RC  
CE  
t
ACE  
OE  
t
t
HZOE  
t
DOE  
HZCE  
t
LZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA OUT  
DATA VALID  
t
LZCE  
t
PD  
t
PU  
V
ICC  
CC  
SUPPLY  
CURRENT  
50%  
50%  
ISB  
Write Cycle No. 1 (WE Controlled)[10, 15, 16]  
t
WC  
ADDRESS  
CE  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
OE  
t
SD  
t
HD  
DATA VALID  
DATA I/O  
NOTE17  
IN  
t
HZOE  
Write Cycle No. 2 (CE Controlled)[10, 15, 16]  
t
WC  
ADDRESS  
CE  
t
SCE  
t
SA  
t
t
HA  
AW  
WE  
t
t
HD  
SD  
DATA I/O  
DATA VALID  
IN  
Notes:  
14. Address valid prior to or coincident with CE transition LOW.  
15. Data I/O is high impedance if OE = V  
.
IH  
16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.  
17. During this period, the I/Os are in output state and input signals should not be applied.  
Document #: 001-06511 Rev. *A  
Page 6 of 13  
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