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7C1351-66 参数 Datasheet PDF下载

7C1351-66图片预览
型号: 7C1351-66
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx36流通型SRAM与NOBL TM架构 [128Kx36 Flow-Through SRAM with NoBL TM Architecture]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 185 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1351  
Switching Waveforms (continued)  
Burst Sequences  
CLK  
t
t
ALH  
ALS  
t
t
CL  
t
CYC  
CH  
ADV/LD  
ADDRESS  
WE  
t
t
AH  
AS  
RA1  
WA2  
RA3  
t
t
WS  
WH  
t
t
WS  
WH  
BWS  
CE  
[3:0]  
t
t
CES  
CEH  
t
t
t
CLZ  
CHZ  
t
DH  
DOH  
t
CLZ  
Q3  
Out  
Q1  
Q1+2  
Out  
Q1+3  
Out  
D2  
In  
D2+2  
In  
D2+3  
In  
Data-  
In/Out  
Q1+1  
Out  
D2+1  
In  
Q3+1  
Out  
Out  
t
CDV  
t
t
CDV  
DS  
Device  
originally deselected  
The combination of WE & BWS  
defines a write cycle (see Write Cycle Description table).  
[3:0]  
CE is the combination of CE , CE , and CE . All chip enables need to be active in order to select  
1
2
3
the device. Any chip enable can deselect the device. RAx stands for Read Address X, WAx stands for  
Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. CEN held  
LOW. During burst writes, byte writes can be conducted by asserting the appropriate BWS  
input signals.  
[3:0]  
Burst order determined by the state of the MODE input. CEN held LOW. OE held LOW.  
= UNDEFINED  
= DONT CARE  
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