50S116T
SDRAM
Operating Timing Example, continued
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)
(CLK = 100 MHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRAS
tRP
RAS
CAS
WE
BA
tRCD
A10
RAa
RAa
CAx
CAy
A0-A9
DQM
CKE
tAC
tWR
ax5
ay1
ax0
ax1
ax3
ay0
ay2
ay4
ax2
ax4
ay3
DQ
Q
Q
Q
Q
Q
Q
D
D
D
D
D
Bank #0
Bank #1
Active
Read
Write
Precharge
* All specs and applications shown above subject to change without prior notice.
1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C
Tel:886-3-3214525
Email: server@ceramate.com.tw
Http: www.ceramate.com.tw
Rev 1.0 Aug.20,2002
Page 28 of 42
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