50S116T
SDRAM
Operating Timing Example, continued
Page Mode Read (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
1
2
3
4
5
0
CLK
CS
tCCD
tCCD
tCCD
tRAS
tRP
tRAS
tRP
RAS
CAS
WE
BA
tRCD
tRCD
RAa
RAa
RBb
RBb
A10
A0-A9
CAm
CBz
CAI
CBx
CAy
DQM
CKE
tAC
tAC
tAC
tAC
tAC
a0
a1
a2
a3
bx0
bx1
Ay0
Ay1
Ay2
am0 am1
am2
bz0
bz1
bz2
bz3
DQ
tRRD
Read
Bank #0 Active
Bank #1
Read
Read
Precharge
AP*
Active
Read
Read
* AP is the internal precharge start timing
* All specs and applications shown above subject to change without prior notice.
1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C
Tel:886-3-3214525
Email: server@ceramate.com.tw
Http: www.ceramate.com.tw
Rev 1.0 Aug.20,2002
Page 27 of 42
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